NDLI: Fabrication and chrarcterization silicon thin film solar cells deposited by HF-PECVD

Content Provider	IEEE Xplore Digital Library
Author	Shui-Yang Lien Yu-Chih Ou Yun-Shao Cho Chao-Chun Wang Chia-Fu Chen Wen-Ching Sun Dong-Sing Wuu
Copyright Year	2010
Description	Author affiliation: Department of Materials Science and Engineering, MingDao University, ChungHua 52354, Taiwan, R.O.C. (Shui-Yang Lien; Yu-Chih Ou; Yun-Shao Cho; Chia-Fu Chen) \|\| Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, R.O.C. (Wen-Ching Sun) \|\| Department of Materials Science and Engineering, Nation Chung Hsing University, Taichung 402, Taiwan, R.O.C. (Chao-Chun Wang; Dong-Sing Wuu)
Abstract	The high frequency plasma enhanced chemical vapor deposition (HF-PECVD) is a well applicable deposition technique for large area and high rate deposition for silicon thin film solar cell application. This paper presents the properties of hydrogenated amorphous silicon (a-Si:H) films and high efficiency of p-i-n solar cells prepared using RF (27.1 MHz) excitation frequency. The influence of the power (10–40 W) and pressure (20–50 Pa) used during the deposition of absorber layers in p-i-n solar cells using pure silane on the properties of the films and solar cells are investigated. We summarize the power and pressure effect on properties and growth mechanism of a-Si:H films. It was found that the a-Si:H films prepared under various deposition conditions show widely various deposition rate, optical-electronic properties and microstructure. AZO films between two layers (n-layer and metal), the AZO back reflector was successfully implemented in a-Si:H singlejunction solar cells. After optimizing the deposition parameters, the amorphous silicon based thin film silicon solar cells with efficiency of 9.15 % have been fabricated by HF-PECVD. These are very encouraging results for future fabrication of high efficiency thin film solar cells using by HF-PECVD.
Starting Page	001545
Ending Page	001548
File Size	630787
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5617024
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Films Silicon Electrodes PIN photodiodes Metals
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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