NDLI: Metamorphic InGaP on GaAs and GaP for wide-bandgap photovoltaic junctions

Content Provider	IEEE Xplore Digital Library
Author	Simon, J. Tomasulo, S. Simmonds, P.J. Romero, M. Lee, M.L.
Copyright Year	2010
Description	Author affiliation: National Renewable Energy Laboratory, Golden, CO, USA (Romero, M.) \|\| Yale University, New Haven, CT, USA (Simon, J.; Tomasulo, S.; Simmonds, P.J.; Lee, M.L.)
Abstract	Metamorphic triple-junction solar cells can currently attain efficiencies as high as 41.1%. Using additional junctions could lead to efficiencies above 50%, but would require the development of a wide-bandgap (2.0–2.2 eV) material to act as the top layer. In this work we demonstrate wide-bandgap InP single junction solar cells grown on GaAs via solid source molecular beam epitaxy. Tensile GaAs buffers grown on GaAs exhibited asymmetric strain relaxation along with formation of faceted trenches, 100–300 nm deep running parallel to the [0–11] direction. Using smaller grading steps and higher substrate temperatures we minimized the faceted trench density and achieved symmetric strain relaxation. In comparison, compressively-strained graded GaAs buffers on GaP showed nearly-complete strain relaxation of the top layers and no evidence of trenches. We subsequently grew InP solar cells on the GaAs buffers. Photoluminescence and transmission electron microscopy measurements gave no indication of CuPt ordering. Finally, we fabricated wide-bandgap InP solar cells and obtained V as high as 1.42 V for InP with E =2.0 eV. Preliminary device results indicate that MBE-grown InP layers are promising candidates for future use as the top junction of a multijunction solar cell.
Starting Page	002106
Ending Page	002110
File Size	835745
Page Count	5
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616304
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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