NDLI: Large area nanocrystalline silicon based multi-junction solar cells with superior light soaking stability

Content Provider	IEEE Xplore Digital Library
Author	Xu, X. Su, T. Ehlert, S. Pietka, G. Bobela, D. Beglau, D. Zhang, J. Li, Y. DeMaggio, G. Worrel, C. Lord, K. Yue, G. Yan, B. Beernink, K. Liu, F. Banerjee, A. Yang, J. Guha, S.
Copyright Year	2010
Description	Author affiliation: United Solar Ovonic LLC, Troy, Michigan, USA (Xu, X.; Su, T.; Ehlert, S.; Pietka, G.; Beglau, D.; Zhang, J.; Li, Y.; DeMaggio, G.; Worrel, C.; Lord, K.; Yue, G.; Yan, B.; Beernink, K.; Liu, F.; Banerjee, A.; Yang, J.; Guha, S.) \|\| National Renewable Energy Laboratory, Golden, Colorado, USA (Bobela, D.)
Abstract	We present our progress in attaining high efficiency nc-Si:H solar cells at high deposition rates with superior light soaking stability. We have focused our effort on three areas: i) improving the spatial uniformity and homogeneous properties for nc-Si:H, such as crystallite grain size and volume fraction, ii) optimizing nucleation and seed layer during the initial growth of the nc-Si:H film, and iii) optimizing nc-Si:H bulk growth and grain evolution. We have conducted an extensive study of the effect of process parameters including hydrogen dilution profiling, VHF power, and substrate temperature on the nc-Si:H film properties and component cell characteristics. We also conducted light soaking tests both indoors and outdoors. The a-Si:H/nc-Si:H/nc-Si:H triple-junction cells incorporating the optimized nc-Si:H component cells show significantly higher performance, achieving an 11.2% AM1.5 stabilized efficiency for both encapsulated large-area (464 $cm^{2})$ cells and inter-connected modules (2320 $cm^{2}).$ To the best of our knowledge, this is the highest stabilized efficiency for a large-area thin-film silicon module.
Starting Page	001141
Ending Page	001146
File Size	818425
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614737
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Grain boundaries Films Degradation Silicon Photovoltaic cells Substrates Indium tin oxide
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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