NDLI: Defect states with an occupation-dependent lattice configuration in zinc-doped GaP on GaAs

Content Provider	IEEE Xplore Digital Library
Author	Gfroerer, T.H. Hampton, D.G. Wanlass, M.W.
Copyright Year	2010
Description	Author affiliation: National Renewable Energy Laboratory, Golden, CO, USA (Wanlass, M.W.) \|\| Davidson College, Davidson, NC, USA (Gfroerer, T.H.; Hampton, D.G.)
Abstract	While lattice-matched GaP on GaAs has the ideal bandgap for the top converter in triple-junction GaAs-based solar cells, more complex designs will benefit from flexibility in the composition of this alloy. Changes in the gallium/indium ratio are accompanied by lattice-mismatch relative to GaAs substrates, so higher dislocation densities are expected in alternative gallium/indium epitaxial alloys. We report deep level transient spectroscopy (DLTS) and photocapacitance measurements on metamorphic, Zn-doped GaP. The experimental evidence, including thermally-activated non-exponential capture and escape and an augmented optical threshold energy, indicates that hole traps with an occupation-dependent lattice configuration are present in this device. Similar behavior has been linked with Zn-doping in GaAsP, raising the suspicion that zinc may also be involved in the AX-like complex reported here.
Starting Page	002026
Ending Page	002028
File Size	725986
Page Count	3
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616937
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photonic band gap Lattices Zinc Temperature measurement Gallium arsenide Transient analysis
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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