NDLI: Improvement of minority-carrier lifetime in GaAsN grown by chemical beam epitaxy

Content Provider	IEEE Xplore Digital Library
Author	Honda, T. Inagaki, M. Suzuki, H. Kojima, N. Ohshita, Y. Yamaguchi, M.
Copyright Year	2010
Description	Author affiliation: Toyota Technological Institute, Nagoya, Japan (Honda, T.; Inagaki, M.; Kojima, N.; Ohshita, Y.; Yamaguchi, M.) \|\| Miyazaki University, Japan (Suzuki, H.)
Abstract	Minority-carrier lifetime (electron) in p-type GaAsN film is improved by chemical beam epitaxy (CBE) and thermal annealing. Growth rate (GR) in CBE is an important factor to improve minority-carrier lifetime in bulk (τ). For as-grown samples, τ is increased from 3.2 × $10^{2}$ ps (GR = 2 µm/h) to 9.0 × $10^{2}$ ps (GR = 0.4 ×m/h). The obtained τ is much longer than the minority-carrier lifetime (∼ $10^{1}$ ps) predicted by the reported carrier diffusion length and mobility. This improvement is due to the increase of nonradiative recombination lifetime (τ) caused by the decrease of nonradiative recombination centers. By thermal annealing, PL lifetime (τ) is increased. Therefore, CBE and thermal annealing have a high possibility to obtain the minority-carrier lifetime required to solar cells (> 1 ns).
Starting Page	002053
Ending Page	002056
File Size	652780
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616424
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in