NDLI: High open-circuit voltage oxygen-containing silicon quantum dots superlattice solar cells

Content Provider	IEEE Xplore Digital Library
Author	Yamada, S. Kurokawa, Y. Miyajima, S. Yamada, A. Konagai, M.
Copyright Year	2010
Description	Author affiliation: Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, 152-8552, Japan (Yamada, S.; Kurokawa, Y.; Miyajima, S.; Yamada, A.; Konagai, M.)
Abstract	We fabricated the solar cell structure of $n^{++}-type$ poly silicon/non-doped oxygen-containing silicon quantum dots superlattice (Si-QDSL)/p-type hydrogenated amorphous silicon/aluminum electrode on a quartz substrate and successfully improved the electrical characteristics in the Si-QDSL solar cells which include 5 nm silicon quantum dots embedded in hydrogenated amorphous silicon carbide (a-SiC:H). This improvement was achieved by the introduction of oxygen into the Si-QDSL layer and the reduction of the sheet resistance in the $n^{++}-type$ poly-silicon layer. The open-circuit voltage and fill factor of 518 mV and 0.51 were obtained, respectively. At least this result indicates that the quality of the O-containing Si-QDSL (Si-QDSL:O) layer was improved electrically. Therefore, it is suggested that part of the observed photocurrent generated in the Si-QDSL:O layer.
Starting Page	000766
Ending Page	000769
File Size	1098423
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5617097
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Photonics
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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