NDLI: Continuous in-line hot-wire chemical vapor deposition of thin film silicon p-i-n solar cells

Content Provider	IEEE Xplore Digital Library
Author	Schropp, R.E.I. van Bomme, C.O. van der Werf, C.H.M. Liu, Y. Xin, J.
Copyright Year	2010
Description	Author affiliation: Utrecht University, Faculty of Science, Debye Institute for Nanomaterials Science, Nanophotonics - Physics of Devices, P.O. Box 80.000, 3508 TA, the Netherlands (Schropp, R.E.I.; van Bomme, C.O.; van der Werf, C.H.M.; Liu, Y.; Xin, J.)
Abstract	This contributions describes the successful implementation of a novel method for in-line continuous deposition of a-Si:H p-i-n solar cells by Hot Wire Chemical Vapour Deposition (HWCVD). As HWCVD does not use RF power supplies, there are no high frequency electromagnetic fields, and thus, scaling up is not hampered by finite wavelength effects or rigorous requirements to avoid inhomogeneous electrical fields. The hot catalytic wire in HWCVD is a linear source of radicals mounted perpendicular to the transport direction. We demonstrate the homogeneous in-line deposition of HWCVD solar cells on upward-facing substrates. The downward, dust-free deposition of thin film silicon greatly simplifies the mounting of the substrates, which can either be rigid or a flexible web, for in-line manufacturing at reduced cost. Amorphous (protocrystalline) as well as nanocrystalline silicon thin films with device-quality properties have been achieved on moving substrates. The local deposition rate is relatively high, at 1 nm/s, and a linear speed up to 30 cm/min has been used to produce device-quality i-layers with protocrystalline nature. We have recently further improved our thus deposited p-i-n solar cells to 8.3% efficiency (despite air breaks after the p-layer and before the n-layer). The potential for high deposition rate and fast roll-to-roll deposition is also discussed.
Starting Page	003739
Ending Page	003742
File Size	936639
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616562
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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