NDLI: Electrical properties and boundary structures in cast-grown polycrystalline silicon

Content Provider	IEEE Xplore Digital Library
Author	Kojima, T. Ohshita, Y. Tachibana, T. Ogura, A. Yamaguchi, M.
Copyright Year	2010
Description	Author affiliation: Meiji University, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Japan (Tachibana, T.; Ogura, A.) \|\| Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya, Japan (Kojima, T.; Ohshita, Y.; Yamaguchi, M.)
Abstract	Annealing effects on grain boundaries (GBs) in polycrystalline Si (pc-Si) was studied using electron-beam-induced current (EBIC) measurement. Recombination velocities were determined for different boundary structures. Investigated boundary structures were electrically active Σ3, Σ9, Σ27a, and small angle (SA) boundaries. Recombination velocity at SA boundary is greater by an order than those of CSL boundaries. Compared between CSL boundaries in the as-grown wafer, the recombination velocities are greater in higher sigma numbers of GBs. The electrically active SΣ boundary was revealed to consist of two or more twin boundaries with dislocations. Recombination velocities at GBs except Σ27a decreased after annealing at 600 to 800 °C. It is suggested that metal impurities diffused out from GBs at these temperatures. After annealing at 1000 °C, recombination velocities of all the GBs drastically increased. Precipitation and increase in Secco-etch pit size were observed after annealing.
Starting Page	001419
Ending Page	001422
File Size	956554
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614412
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Spontaneous emission
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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