NDLI: All screen-printed industrial n-type Czochralski silicon solar cells with aluminium rear emitter and selective front surface field

Content Provider	IEEE Xplore Digital Library
Author	Meyer, K. Schmiga, C. Jesswein, R. Dupke, M. Lossen, J. Krokoszinski, H.-J. Hermle, M. Glunz, S.W.
Copyright Year	2010
Description	Author affiliation: Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany (Hermle, M.; Glunz, S.W.) \|\| Bosch Solar Energy AG, Wilhelm-Wolff-Strasse 23, 99099 Erfurt, Germany (Meyer, K.; Schmiga, C.; Jesswein, R.; Dupke, M.; Lossen, J.; Krokoszinski, H.-J.)
Abstract	The influence of the base dopand on the cell performance in a cell type with selective front phosphorus diffusion and an alloyed aluminum rear doping is investigated in this work. First this was done by using two dimensional device simulations to vary the doping species (n- or p-type) and the concentration over a broad range. For n-type base material we found that for a given front side system (diffusion and passivation) the fill factor tends to increase while the short circuit current decreases with increasing base doping concentration. The ideal base doping is therefore a function of the quality of the front side diffusion and passivation. In comparison to the n-type cells the dependence of the p-type cell results on the base doping concentration is much weaker. Based on the simulations a base doping concentration of 8 □cm was chosen to process n-type solar cells, which were then compared with identically processed p-type cells. For our front and rear screen-printed large-area n- as well as for our p-type cells we have achieved efficiencies up to 17.6 %.
Starting Page	003531
Ending Page	003535
File Size	629629
Page Count	5
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614183
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Resistance Photovoltaic cells Semiconductor process modeling Silicon Short circuit currents
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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