NDLI: Rating of annual energy yield more sensitive to reference power than module technology

Content Provider	IEEE Xplore Digital Library
Author	Zinsser, B. Makrides, G. Schubert, M.B. Georghiou, G.E. Werner, J.H.
Copyright Year	2010
Description	Author affiliation: Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569, Germany (Zinsser, B.; Schubert, M.B.; Werner, J.H.) \|\| Department of Electrical and Computer Engineering, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537 Nicosia, 1678, Cyprus (Makrides, G.; Georghiou, G.E.)
Abstract	At present, many different photovoltaic (PV) technologies share the market. Especially investors want to know how much energy each of the PV technologies produces. This paper discusses the measured annual energy yield E of twelve PV technologies under different climatic conditions in Germany and Cyprus over three years of operation. In order to compare the annual yield of different PV technologies, the E data are normalized to the rated power P, to the flasher power P, and to the measured field power P. An error analysis is done for both, the energy measurement E and the nominal power P. It is found that the typical uncertainty for an energy yield comparison is ±5 %. This means that a difference of 10 % in the annual energy yield between PV technologies can not be traced back to the technologies themselves. The performance analysis of all PV systems shows that the differences in the energy yield are smaller than the error bars on the reference power. Therefore it is not yet possible to decide which PV technology is the best. Moreover, despite obvious trends on the data, we can not unambiguously conclude that PV modules with a better temperature or low light behavior will ensure a higher energy yield in general, since the propagation of state-of-the-art nominal power rating errors outbalances the well recognized effects of low light and temperature dependencies.
Starting Page	001095
Ending Page	001099
File Size	1161171
Page Count	5
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614705
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Europe Radiation effects Silicon Films
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in