NDLI: Characterization of dielectric layer, laser damage and edge recombination in miniature silicon solar cells

Content Provider	IEEE Xplore Digital Library
Author	Zin, N.S. Blakers, A.
Copyright Year	2010
Description	Author affiliation: Centre of Sustainable Energy Systems (CSES), the Australian National University, Canberra ACT 0200, Australia (Zin, N.S.; Blakers, A.)
Abstract	Miniature silicon solar cells (8 × 2.0 $mm^{2})$ are being fabricated for use in tandem-cell concentrator systems. Several factors combine to make the achievement of high efficiency problematical. These include surface, bulk and edge recombination. The latter is relatively important because the surface area of the edge of a small cell is a large fraction of the total surface area. Surface recombination in the cells is caused by the loss of passivating hydrogen beneath a conformal LPCVD SiN coating, induced by high temperature annealing. Bulk carrier lifetime degradation mechanisms that we have encountered include silicon crystal damage induced by laser scribing of the cells, which affects a relatively large proportion of the volume of the cell. The Quasi-steady state photoconductance (QSSPC) measurement technique was used for the carrier lifetime degradation study. Firstly, a detailed study was undertaken of the carrier lifetime degradation due to the loss of hydrogen in conformally deposited LPCVD silicon nitride grown samples and the effect of hydrogenation on these layers, when subjected to various anneal times and temperatures. Additionally, LPCVD nitride was studied to determine whether it can be used as a layer that can prevent or resist possible contamination, induced by prolonged high temperature anneals. Secondly, a comparison was made between reference samples and samples that were exposed to laser scribing and dicing to determine whether laser scribing is suitable for the shaping of miniature silicon solar cells. Finally, cells with different pn junction designs were fabricated and tested to study edge recombination.
Starting Page	003647
Ending Page	003653
File Size	966474
Page Count	7
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614454
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon compounds Pollution measurement Loss measurement Nitrogen Variable speed drives Iron Coatings edge recombination QSSPC carrier lifetime degradation LPCVD nitride laser-induced damage
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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