NDLI: HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell

Content Provider	IEEE Xplore Digital Library
Author	Matsumoto, Y. Ortega, M. Sánchez, V.M. Wünsch, F. Urbano, J.A.
Copyright Year	2010
Description	Author affiliation: Dept. Solare Energetik Helmholtz-Zentrum Berlin für Materialien und Energie Lise-Meitner-Campus, Glienicker Str. 100, 14109 Berlin, Germany (Wünsch, F.) \|\| Electrical Engineering Department, Centro de Investigación y de Estudios Avanzados del IPN, Av. IPN 2508, Col. San Pedro Zacatenco, Mexico City 07360, México (Matsumoto, Y.; Ortega, M.; Sánchez, V.M.; Urbano, J.A.)
Abstract	P-type-microcrystalline-silicon / n-type-crystalline-silicon hetero-junction solar cell has been prepared by means of hot-wire chemical vapor deposition (HW-CVD) technique. The solar cell structure was illuminated on the opposite side of the normally-formed heterojunction. With this inverted structure, the photovoltaic cell has the design potential to improve the light-incident surface-texturing with the possibility to avoid the use of transparent conducting oxide (TCO). Solar cells were fabricated on Czochralsky (CZ)-grown phosphorous-doped crystalline-silicon (c-Si) substrates within 0.5 to 1 ohm-cm. HW-CVD has employed for the deposition of a very thin intrinsic hydrogenated amorphous silicon (i-a-Si) as a buffer-layer as a heterojunction interface, and boron-doped hydrogenated microcrystalline silicon (p-μc-Si) on c-Si substrate. The tungsten catalyst temperature (T) was settled to 1600 °C and 1950 °C for i-a-Si and p-μc-Si films, respectively. Silane (SiH), hydrogen (H) and diluted diborane (B) gases were used for p-μc-Si at the substrate temperatures (T) of 200 °C. The obtained I–V characteristics under simulated solar radiation at $100mW/cm^{2}$ are: Jsc =26.1 $mA/cm^{2};$ Voc = 545 mV; Jm = 21.4 $mA/cm^{2};$ Vm = 410 mV; FF = 61.7%, with total area efficiency of η= 8.8%. The solar cell has great potential to improve its conversion efficiency with proper surface passivation and antireflection coat.
Starting Page	001450
Ending Page	001455
File Size	1162275
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614432
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Substrates Optical surface waves Surface treatment Artificial intelligence Optical buffering Optical films
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

HW-CVD deposited microcrystalline-silicon on crystalline-silicon solar cell with inverted heterojunction structure

Study of a-SiC:H buffer layer on nc-Si/a-Si:H solar cells deposited by PECVD technique

Improved light-trapping effect in a-Si:H / μC-Si:H tandem solar cells by using high haze SnO:F thin films

Cat-CVD deposited inverted μc-Si:H/c-Si heterojunction solar cell approach

Optical design of multi-stacked intermediate layers with wavelength-selective reflectance for a-Si:H/μc-Si:H tandem solar cells

HW-CVD DEPOSITED PC-Si : H FOR THE INVERTED HETEROJUNCTION SOLAR CELL

Hetero-junction microcrystalline silicon solar cells with wide-gap p-μc-Si:H layer

Structural quality of smooth AIC poly-Si films on glass substrates

Advanced nano-crystalline Si:H solar cell structures using novel transparent conducting light trapping oxides (TLCO)

HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell

Similar Documents

HW-CVD deposited microcrystalline-silicon on crystalline-silicon solar cell with inverted heterojunction structure

Study of a-SiC:H buffer layer on nc-Si/a-Si:H solar cells deposited by PECVD technique

Improved light-trapping effect in a-Si:H / μC-Si:H tandem solar cells by using high haze SnO:F thin films

Cat-CVD deposited inverted μc-Si:H/c-Si heterojunction solar cell approach

Optical design of multi-stacked intermediate layers with wavelength-selective reflectance for a-Si:H/μc-Si:H tandem solar cells

HW-CVD DEPOSITED PC-Si : H FOR THE INVERTED HETEROJUNCTION SOLAR CELL

Hetero-junction microcrystalline silicon solar cells with wide-gap p-μc-Si:H layer

Structural quality of smooth AIC poly-Si films on glass substrates

Advanced nano-crystalline Si:H solar cell structures using novel transparent conducting light trapping oxides (TLCO)

HW-CVD deposited μc-Si:H for the inverted heterojunction solar cell