NDLI: Optical mapping of large area thin film solar cells

Content Provider	IEEE Xplore Digital Library
Author	Zhiquan Huang Jie Chen Sestak, M.N. Attygalle, D. Dahal, L.R. Mapes, M.R. Strickler, D.A. Kormanyos, K.R. Salupo, C. Collins, R.W.
Copyright Year	2010
Description	Author affiliation: Calyxo USA, Inc., Perrysburg, OH 43551, USA (Kormanyos, K.R.) \|\| On-Line Coatings Technology, NSG-Pilkington, Northwood, OH 43619, USA (Strickler, D.A.) \|\| Center for Photovoltaics Innovation and Commercialization, University of Toledo, OH 43606, USA (Zhiquan Huang; Jie Chen; Sestak, M.N.; Attygalle, D.; Dahal, L.R.; Mapes, M.R.)
Abstract	The mapping capability of multichannel spectro-scopic ellipsometry (SE) has been demonstrated with examples from hydrogenated amorphous silicon (a-Si:H) and CdTe thin film photovoltaics (PV) technologies on glass. Maps as large as 40 x 80 $cm^{2}$ have been obtained. For a-Si:H, maps of the bulk i-layer thickness and band gap as well as surface roughness layer thickness have been determined. For CdTe, a map of the CdS window layer thickness has been determined with the prospect of grain structure mapping. In both cases, maps of the thickness and properties of the underlying transparent conducting oxide (TCO) layers have been determined. These first results demonstrate the ability of mapping SE to guide scale-up of thin film PV deposition processes.
Starting Page	001678
Ending Page	001683
File Size	2723909
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616069
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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