NDLI: Observations on the spectral characteristics of defect luminescence of silicon wafer solar cells

Content Provider	IEEE Xplore Digital Library
Author	Peloso, M.P. Chaturvedi, P. Wurfel, P. Hoex, B. Aberle, A.G.
Copyright Year	2010
Description	Author affiliation: Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), 7 Engineering Drive 1, Singapore 117574, SINGAPORE (Peloso, M.P.; Chaturvedi, P.; Hoex, B.; Aberle, A.G.) \|\| Institute for Applied Physics, University of Karlsruhe, 76131, GERMANY (Wurfel, P.)
Abstract	Recent studies of luminescence from silicon wafer solar cells under reverse bias show the potential for detection of defects in these solar cells. It was noticed that there is some distinction between breakdown voltages for various defect types, but there is no clear method to identify the particular chemical or structural origin of the defects being observed. The diode breakdown luminescence spectrum of silicon wafer solar cells was reported to peak in the visible range of the electromagnetic spectrum at around 700 nm, suggesting that photons with energies higher than the silicon bandgap are being emitted during diode breakdown. In the experiment presented here we use both Si and InGaAs cameras combined with a set of long-pass filters in the 900–1500 nm range to study the spectrum of defect luminescence. We have observed broadband reverse-bias breakdown luminescence spanning the wavelength range from 500 nm to 1500 nm. This suggests that diode breakdown luminescence does not have its peak in the visible part of the electromagnetic spectrum, as it clearly extends into the infrared wavelength range. We also demonstrate that sub-bandgap luminescence (which is typically associated with dislocations) and breakdown luminescence (which is associated with impurities) does not correspond one-to-one, and thus in principle can distinguish the types of defects present in the material. Further studies combining structural and chemical analysis need to be performed to confirm the accuracy of the technique, and to improve the model of diode breakdown luminescence.
Starting Page	002714
Ending Page	002717
File Size	5352317
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616880
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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