NDLI: Degradation of different photovoltaic technologies under field conditions

Content Provider	IEEE Xplore Digital Library
Author	Makrides, G. Zinsser, B. Georghiou, G.E. Schubert, M. Werner, J.H.
Copyright Year	2010
Description	Author affiliation: Institut für Physikalische Elektronik (ipe), Universität Stuttgart, Pfaffenwaldring 47, 70569, Germany (Zinsser, B.; Schubert, M.; Werner, J.H.) \|\| Department of Electrical and Computer Engineering, University of Cyprus, 75 Kallipoleos Avenue, P.O. Box 20537, Nicosia, 1678, Cyprus (Makrides, G.; Georghiou, G.E.)
Abstract	Over the past years a number of testing facilities have been monitoring the performance and degradation of PV systems according to the established standards of indoor and outdoor testing. The objective of this paper is to present the initial first year and longer-term rate of degradation of different PV technologies installed at the testing facility of the University of Cyprus, based on outdoor field measurements and methodologies. The first year degradation of the technologies was obtained using a data filtering technique of DC generated power at Maximum Power Point (MPP) at irradiation points of higher than 800 $W/m^{2}$ and normalising the measured power to Standard Test Conditions (STC). Over the first year, mono-crystalline silicon technologies showed degradations in the range 2.12 % – 4.73 % while for multi-crystalline technologies the range was 1.47 % – 2.40 %. The amorphous silicon system demonstrated the highest first year decrease in power with an average degradation of 13.82 %. For validation purposes the first year degradation was also obtained using a second technique by evaluating outdoor measured data-sets under Air Mass (AM) 1.5 (morning and afternoon) conditions and during noon (high irradiance and temperature). In this case the evaluated results showed deviations of up to 6 % and 3 % for mono-crystalline and multi-crystalline technologies respectively whereas for thin-film this was 5 %. Finally, the longer-term degradation rates were evaluated by using the least-square fit method on average monthly data-set blocks of (i) Performance Ratio (PR), (ii) PR evaluated by filtering outage data-sets and restricting to high irradiance conditions and (iii) the Photovoltaic for Utility Systems Applications (PVUSA) rating methods, for the period June 2007 – June 2009.
Starting Page	002332
Ending Page	002337
File Size	575983
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614439
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Temperature measurement Amorphous silicon MONOS devices Radiation effects Temperature distribution
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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