NDLI: Boron - nitrogen interactions in liquid silicon

Content Provider	IEEE Xplore Digital Library
Author	Dalaker, H. Tangstad, M.
Copyright Year	2010
Description	Author affiliation: Norwegian University of Science and Technology, Dpt. of Materials Science and Engineering, 7465 Trondheim, Norway (Tangstad, M.) \|\| SINTEF Materials and Chemistry, 7465 Trondheim, Norway (Dalaker, H.)
Abstract	The interactions of boron and nitrogen in liquid silicon have been investigated experimentally. The effect of these interactions on the solubility limit of nitrogen in liquid silicon has been examined, and the precipitation of BN-particles is also discussed. Silicon has been melted in Si-crucibles and samples extracted using quartz tubes and a syringe. Prior to melting, 0.1 or 1.5 wt% boron were added to the silicon feedstock. The rapidly quenched samples have been analysed for nitrogen-content using Leco™, and Arrhenius-expressions describing the nitrogen content as functions of temperature were derived for the different boron levels. When comparing the obtained nitrogen contents with results previous results published by the current authors for the pure Si - N-system, it is clear that the presence of boron affects the solubility limit, with much lower levels of nitrogen being detected in the boron-doped samples.
Starting Page	002162
Ending Page	002164
File Size	717051
Page Count	3
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5615892
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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