NDLI: Torwards marketable efficiency solution-processed kesterite and chalcopyrite photovoltaic devices

Content Provider	IEEE Xplore Digital Library
Author	Mitzi, D.B. Todorov, T.K. Gunawan, O. Min Yuan Qing Cao Wei Liu Reuter, K.B. Kuwahara, M. Misumi, K. Kellock, A.J. Chey, S.J. de Monsabert, T.G. Prabhakar, A. Deline, V. Fogel, K.E.
Copyright Year	2010
Description	Author affiliation: Tokyo Ohka Kogyo Co., Ltd., 1590 Tabata, Samukawa-machi, Koza-gun, Kanagawa 253-0114 Japan (Kuwahara, M.; Misumi, K.) \|\| IBM T. J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598 USA (Mitzi, D.B.; Todorov, T.K.; Gunawan, O.; Min Yuan; Qing Cao; Wei Liu; Reuter, K.B.; Chey, S.J.; de Monsabert, T.G.; Prabhakar, A.; Fogel, K.E.) \|\| IBM Almaden Research Center, 650 Harry Rd, San Jose, CA 95120 USA (Kellock, A.J.; Deline, V.)
Abstract	Although CuIn (CIGS) chalcopyrite and Cu (CZTSSe) kesterite-related films offer significant potential for low-cost high-efficiency photovoltaic (PV) devices, the complicated multi-element nature of these materials generally leads to the requirement of more complex and costly deposition processes. This talk focuses on employing the unique solvent properties of hydrazine to solution-deposit CIGS and CZTSSe films for high-performance solar cells. CIGS films are deposited by completely dissolving all elements in hydrazine, solution-depositing a molecular precursor film, and heat treating in an inert atmosphere, to yield a single-phase chalcopyrite film (no post-deposition selenization required). Trace additions of Sb improve grain structure in the resulting film and enhance device performance. Devices based on a glass/Mo/spin-coated CIGS/CdS/i-ZnO/ITO structure yield power conversion efficiencies of as high as 13.6% (AM1.5 illumination; NREL certified). Analogous CZTSSe absorber layers have been processed using a hybrid hydrazine-based slurry approach, enabling liquid-based deposition of kesterite-type films and resulting device efficiencies of as high as 9.6% (AM1.5 illumination; NREL certified)—exceeding the previous kesterite performance record by ∼40%. The combination of improved efficiency, In-free absorber and solution-based processing opens opportunities for development of a low-cost and pervasive technology.
Starting Page	000640
Ending Page	000645
File Size	1909852
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616865
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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