NDLI: Metal induced crystallization of amorphous silicon using layer-by-layer technique with gold ultra thin layer

Content Provider	IEEE Xplore Digital Library
Author	Aono, M. Takiguchi, H. Endo, T. Okamoto, Y. Miyazaki, H. Morimoto, J. Kitazawa, N. Watanabe, Y.
Copyright Year	2010
Description	Author affiliation: Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa, JAPAN (Aono, M.; Takiguchi, H.; Endo, T.; Okamoto, Y.; Miyazaki, H.; Morimoto, J.; Kitazawa, N.; Watanabe, Y.)
Abstract	Multilayered films composed of amorphous silicon (a-Si) layer and ultra thin gold layer were prepared for getting polycrystalline silicon (poly-Si) with high crystallization in a short time by metal induced crystallization (MIC) method. Deposition method of the multilayered films was a combination of ion beam evaporation and layer-by-layer technique. We prepared samples with different Au layer thickness of 0.2, 0.4, and 0.8 nm, respectively. The number of a-Si/Au cycle was 50. The samples were annealed at 473, 673, and 873 K for crystallization of a-Si layer. Crystal structure of the films was characterized by X-ray diffraction, Raman spectroscopy, and transmission electron microscopy. Electrical properties were discussed from the resistivity depending on the annealing temperatures. Optical absorbance was measured by UV-visible transmittance spectroscopy. The crystallization of a-Si occurred at low annealing temperature in thicker Au layer films. However, the crystalline volume fraction of a-Si reached to the maximum value when the annealing temperature was 673 K and the Au layer thickness was 0.4 nm. Metallic conductivity was shown in the annealed film of 0.8 nm Au layer thickness. In addition, we found that Au atoms formed nanoparticles in the films by thermal annealing, and a typical peak of surface plasmon by Au nanoparticles observed in the optical absorption spectra.
Starting Page	003654
Ending Page	003659
File Size	625563
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614456
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Temperature measurement Gold Substrates Artificial neural networks Reflection
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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