NDLI: Fundamental parameters extraction from dark I–V characteristics: A comprehensive study on amorphous/crystalline silicon hetero-junction solar cell

Content Provider	IEEE Xplore Digital Library
Author	Der-Chin Wu Jui-Chung Shiao Chien-Hsi Lin Chien-Hsun Chen Chih-Hung Liao Wei-Chih Hsu Wen-Haw Lu Chung-Wen Lan
Copyright Year	2010
Description	Author affiliation: Green Energy & Environment Research Laboratories, Industrial Technology Research Institute, Hsin-Chu, Taiwan, R.O.C. (Der-Chin Wu; Jui-Chung Shiao; Chien-Hsi Lin; Chien-Hsun Chen; Chih-Hung Liao; Wei-Chih Hsu; Wen-Haw Lu; Chung-Wen Lan)
Abstract	Dark current-voltage (I–V) curves are usually used to analyze the electric characteristics of solar cell device based on one-diode and two-diode equivalent circuit models. In this study, we extracted the parameters from dark I–V with Nelder-Mead algorithm and repeated error estimation method based on two-diode circuit model. If we give one set of initial values of the parameters into the Nelder-Mead algorithm, such evaluation method will show us one set of reasonable fitting results. Therefore, we will get the best fitting results after a series of set initial values evaluation based on our repeated algorithm process. The final fitting results showed that trends of F.F. were fully influenced by series resistances. With thicker p-layer, they demonstrated larger ideality factors and less short-circuit current densities. Short-circuit current densities show the opposite trend with respect to ideality factors in p-layer solar cell. However, the insertion of intrinsic thin-layer between p-layer and n-type c-Si can reduce the ideality factor. We found the calculated V extracted from the dark I–V was consistent to the measured V from standard solar simulator. The insertion of i-layer greatly reduced the J and hence enhanced the V.
Starting Page	002751
Ending Page	002755
File Size	1057588
Page Count	5
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5616817
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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