NDLI: Orientation selected epitaxy for grain enlargement of AIC poly-Si seed layers

Content Provider	IEEE Xplore Digital Library
Author	Sung-Yen Wei Sheng-Min Yu Hung-Hsi Lin Wei Chen Chun-Jen Chen Tzer-Shen Lin Chuen-Horng Tsai Fu-Rong Chen
Copyright Year	2010
Description	Author affiliation: Industrial Technology Research Institute. 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu, Taiwan (Sheng-Min Yu; Tzer-Shen Lin) \|\| National Tsing Hua University. 101, section 2 Kuang Fu Road, Hsinchu 300, Taiwan (Sung-Yen Wei; Hung-Hsi Lin; Wei Chen; Chun-Jen Chen; Chuen-Horng Tsai; Fu-Rong Chen)
Abstract	A novel method for producing a highly-(100) orientated, large grain of poly-Si seed layer on glass by multi-round aluminum-induced crystallization (AIC) is developed. A flat 200nm poly-Si layer was first fabricated by regular AIC process to be a based layer. The second round AIC process was carried out immediately on the based layer to epitaxially grow up to a 400nm poly-Si layer by solid phase epitaxy (SPE) mechanism. The structure of enlarged epitaxial grain was examined by transmission electron microscopy (TEM), the orientation map as well as histogram of grain size from large area were performed by electron backscatter diffraction (EBSD), and the crystallinity of multi-round AIC was verified by Raman spectrometry. The lateral growth and grain suppression can be clearly observed in cross-sectional TEM analysis. The average grain size can be determined from analysis of histogram. The speed of epitaxial growth is strongly influenced by the orientation of the growth plane. We utilize this characteristic to promote the {100} proportion and reduce others to achieve a highly oriented seed-layer for followed thickening step. The population of {100} crystallographic plane is obtained statistically from orientation map and a pole figure analysis. The mechanism of the multi-round AIC will be discussed in detail in the conference.
Starting Page	001586
Ending Page	001588
File Size	447327
Page Count	3
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5617013
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Epitaxial growth Amorphous magnetic materials Magnetic resonance imaging Magnetic devices Artificial intelligence Radio frequency Silicon
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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