NDLI: Effect of annealing for Ag-In-S thin films prepared by a vacuum evaporation method

Content Provider	IEEE Xplore Digital Library
Author	Akaki, Y. Yamashita, K. Yoshitake, T. Nakamura, S. Seto, S. Tokuda, T. Yoshino, K.
Copyright Year	2010
Description	Author affiliation: Department of Electrical Engineering, Ishikawa National College of Technology, 929-0392, Japan (Seto, S.) \|\| Department of Electrical and Electronics Engineering, Miyazaki University, 889-2192, Japan (Tokuda, T.) \|\| Department of Electrical and Computer Engineering, Miyakonojo National College of Technology, Miyazaki 885-8567, Japan (Akaki, Y.; Yoshino, K.) \|\| Department of Electrical and Electronics Engineering, Tsuyama National College of Technology, Okayama 708-8509, Japan (Nakamura, S.) \|\| Department of Applied Science for Electronics and Materials, University of Kyushu, Fukuoka, 816-8580, Japan (Yamashita, K.; Yoshitake, T.)
Abstract	Ag-In-S thin films deposited by a single-source thermal evaporation method were annealed in HS atmosphere from 300 to 450 °C for 60 min. after the evaporation. All the films annealed above 300 °C were obtained chalcopyrite AgInS crystal phase. The composition ratios of Ag, In and S atoms become close to stoichiometry with increasing the annealing temperature. The grain size of the AgInS crystal in the films annealed at 400 °C are approximately 1.5∼4 µm.
Starting Page	002405
Ending Page	002407
File Size	1274390
Page Count	3
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614345
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Diffraction Grain size Chemicals Optical films
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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