NDLI: Application of microcrystalline Si infrared absorbers in triple junction solar cells

Content Provider	IEEE Xplore Digital Library
Author	Matsui, T. Haijun Jia Kondo, M. Mizuno, K. Tsuruga, S. Sakai, S. Takeuchi, Y.
Copyright Year	2010
Description	Author affiliation: Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan (Matsui, T.; Haijun Jia; Kondo, M.) \|\| Solar Power System Business Unit, MHI, Isahaya, Nagasaki 854-0065, Japan (Takeuchi, Y.) \|\| Advanced Technology Research Center, MHI, Yokohama, Kanagawa, 236-8515, Japan (Tsuruga, S.; Sakai, S.) \|\| Nagasaki R. & D. Center, Mitsubishi Heavy Industries, Ltd. (MHI), 851-0301, Japan (Mizuno, K.)
Abstract	In this contribution, we report the first results on the application of hydrogenated microcrystalline Si (μc-Si:H) as bottom cell absorber in triple junction solar cells. It has been demonstrated that μc-Si:H films prepared by PECVD in a composition range x∼0.1–0.2 show an enhanced infrared response in a p-i-n single junction structure as compared with the conventional μc-Si:H (x=0) solar cells. Furthermore, in order to enhance the infrared absorption of solar cells, highly-textured front TCO layers with improved infrared transmittance have been developed by performing the chemical-etching of sputtered ZnO:Ga films followed by high-temperature (∼600 °C) annealing. By applying these μc-Si:H and TCO layers to triple junction devices, so far, we obtained an initial efficiency of 11.6% (J=9.2 $mA/cm^{2},$ V=1.82 V, FF=0.70) in a structure of a-Si:H (0.18 µm)/μc-Si:H (2.0 µm)/μc-Si:H (2.2 µm). Spectral response measurement indicates that the photocurrent densities of three component cells are nearly balanced at ∼9 $mA/cm^{2}$ with a total photocurrent density of 27.6 $mA/cm^{2}.$ Light-soaking test indicates that the degradation ratio is about 5%.
Starting Page	000311
Ending Page	000316
File Size	762824
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5615904
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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