NDLI: Electronic surface passivation of crystalline silicon solar cells by a-SiC:H

Content Provider	IEEE Xplore Digital Library
Author	Ehling, C. Treptow, D. Bilger, G. Einsele, F. Schubert, M.B.
Copyright Year	2010
Description	Author affiliation: IEF-5 Photovoltaik, Forschungszentrum Jülich GmbH, 52425, Germany (Einsele, F.) \|\| Institut für Physikalische Elektronik, Universität Stuttgart, 70569, Germany (Ehling, C.; Treptow, D.; Bilger, G.; Schubert, M.B.)
Abstract	Hydrogenated amorphous silicon carbide (a-SiC:H) provides excellent electronic surface passivation for crystalline silicon solar cells. The hydrogen and carbon content of the passivation layers control the surface passivation depending on hydrogen bonding and annealing temperature. The carbon content c of the amorphous layers varies depending on the methan-to-silane gas flow ratio during deposition. The electronic passivation quality exhibits best thermal stability for an optimum c = 2.3 at.%. Annealing this sample under forming gas atmosphere up to T = 550°C enables excellent effective minority carrier lifetimes τ = 1.2 ms. Hydrogen effusion measurements relate this result to an increase in H-content with rising c and to a simultaneous shift of the effusion peaks to higher temperatures. A higher carbon content reduces the diffusion of atomic hydrogen out of the amorphous layers. The Si-H bonding configurations in the amorphous layers, analyzed from infrared absorption spectroscopy, reveal that a-SiC:H layers with lower carbon content have a higher density. Increasing c induces voids and microvoids in the amorphous structure, favoring the diffusion of molecular hydrogen out of the a-SiC:H layers. We show the implementation of the thermally most stable a-SiC:H as back side of an industrial silicon solar cell. Evaporated and tempered Al point contacts through the amorphous layers enable the current transport through a-SiC:H. Compared to a full-area back side metallization, the lower recombination velocity of the a-SiC:H back side enhances the open circuit voltage, demonstrating the benefit of a-SiC:H passivation for industrial crystalline silicon solar cells.
Starting Page	001368
Ending Page	001373
File Size	969118
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614379
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Artificial intelligence Manufacturing Fires
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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