NDLI: Development of no-rinse screen printable etch paste for contact via in dielectric films

Content Provider	IEEE Xplore Digital Library
Author	Mishra, R. Zhao, L. Zhang, Z. Guo, H.-W. Kumar, P. Mungekar, H. Stewart, M. Weidman, T. Parikh, S. Paak, S.
Copyright Year	2010
Description	Author affiliation: Applied Materials Inc., Santa Clara, California, USA (Mishra, R.; Zhao, L.; Zhang, Z.; Guo, H.-W.; Kumar, P.; Mungekar, H.; Stewart, M.; Weidman, T.; Parikh, S.; Paak, S.)
Abstract	Screen printable etch paste was developed for low cost patterning of dielectric films. This technique offers a simple print and bake approach to pattern without the need for a rinse step. Residue analysis of the etched area showed no sign of any organic residue left behind by the etch process. High carrier lifetime indicates no significant contamination or silicon surface damage. The etched via diameter of 150 µm was demonstrated in thermal oxide while smaller via size of 100 µm was achieved in silicon nitride (SiN) or a combination of silicon oxide and nitride. Contact resistance measurement through the etched vias using TLM method showed values less than $3mΩ.cm^{2}.$ The etch paste and process technique can be easily used in PERC cell as well as advanced architecture Interdigitated Back Contact (IBC) cell for low cost patterning.
Starting Page	003536
Ending Page	003539
File Size	779656
Page Count	4
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614195
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Computer architecture Surface treatment Aluminum Contact resistance Microprocessors Dielectrics
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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