NDLI: A comparison between thin film and c-Si PV technologies for MW size applications

Content Provider	IEEE Xplore Digital Library
Author	Doni, A. Dughiero, F. Lorenzoni, A.
Copyright Year	2010
Description	Author affiliation: Department of Electrical Engineering, University of Padova, Italy (Doni, A.; Dughiero, F.; Lorenzoni, A.)
Abstract	In the last few years the thin film PV technology market share has steadily grown thanks to its lower manufacturing cost in comparison with traditional crystalline silicon technologies. While thin film PV modules have shown their potential in special applications where c-Si modules are unsuitable, like building integration, the use of these modules in large scale PV power plants requires a detailed economic analysis to assess if these technologies can be cost-competitive in a time when c-Si is showing a great potential on cost reduction. In this paper three technologies are compared in a technological and economic point of view. The main technological advantages and weaknesses of multi-crystalline silicon, amorphous micro-crystalline silicon and cadmium telluride PV modules are analyzed and an economical analysis is made for assessing the economic viability of each technology for a 1 MW power plant installed in Southern Italy. The comparison is made evaluating the cost of the energy produced by the three technologies in the same environmental condition during a 20 years lifetime. The model evaluates the total energy yield of the different technologies considering the actual performance in field conditions. This allows to consider the better behavior of thin film PV modules with low and diffuse radiation, together with the different behavior with temperature. All the main cost drivers, such as manufacturing, installation, operation and maintenance costs, as well as tracking system, balance of system and land use costs are used for assessing which technology best suites for a MW size PV power plant application and how big is the gap between the leading technology and the emerging ones.
Starting Page	002380
Ending Page	002385
File Size	688100
Page Count	6
File Format	PDF
ISBN	9781424458905
ISSN	01608371
e-ISBN	9781424458929
DOI	10.1109/PVSC.2010.5614382
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-06-20
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power generation Manufacturing Production Silicon Buildings Investments Temperature distribution
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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