NDLI: Ferroelectric properties of BiFe thin film formed on Pt electrodes

Content Provider	IEEE Xplore Digital Library
Author	Zhiyong Zhong Sugiyama, Y. Ishiwara, H.
Copyright Year	2008
Description	Author affiliation: Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan (Zhiyong Zhong; Ishiwara, H.) \|\| Fujitsu Labs. Ltd., Atsugi, Japan (Sugiyama, Y.)
Abstract	$BiFe_{x}Cr_{1-x}O_{3}$ (x=0.4~0.6) thin films were formed on $Pt/Ti/SiO_{2}/Si$ (100) substrates by chemical solution deposition. The spin-coated, dried and calcined films were finally annealed in a mixed gas of $N_{2}$ and $O_{2}$ $(N_{2}:O_{2}=4:1)$ at 450, 500, 550 and 600°C. X-ray diffraction analysis revealed that polycrystalline grains of $BiFeO_{3}$ and $BiCrO_{3}$ coexist in the films, and that double perovskite $Bi_{2}FeCrO_{6}$ crystallites might also be included. The leakage current density measured at room temperature was lower than $1×10^{-5}$ $A/cm^{2}$ in the films annealed at 450°C. The remanent polarization increased with increase of the Fe ratio, and a large value of 45 $¿C/cm^{2}$ was obtained in the $BiFe_{0.6}Cr_{0.4}O_{3}$ thin film, when it was measured at 1.9 MV/cm and 50 kHz. Fatigue property was also improved and no degradation of the remanent polarization was observed in the $BiFe_{0.4}Cr_{0.6}O_{3}$ film by switching cycles up to 1 × $10^{8}.$
Starting Page	699
Ending Page	702
File Size	3101629
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734627
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ferroelectric materials Chromium Annealing Temperature measurement Polarization Semiconductor thin films Sputtering Substrates Chemicals X-ray diffraction fatigue ferroelectric FeRAM BiFeO3 BiCrO3 remanent polarization
Content Type	Text
Resource Type	Article

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