NDLI: Mask synthesis for 65nm SRAM manufacturing using gradient-based Inverse Lithography Technology (ILT)

Content Provider	IEEE Xplore Digital Library
Author	Wei Xiong Jinyu Zhang Min-Chun Tsai Yan Wang Zhiping Yu
Copyright Year	2008
Description	Author affiliation: Adv. Technol. Group, Synopsys Inc., Mountain View, CA, USA (Min-Chun Tsai) \|\| Inst. of Microelectron., Tsinghua Univ., Beijing, China (Wei Xiong; Jinyu Zhang; Yan Wang; Zhiping Yu)
Abstract	Inverse Lithography Technology (ILT) is a promising solution to enhance the resolution of the optical system in deep-subwavelength lithography. In this paper, we introduce a gradient-based framework for mask synthesis. Firstly, we model the mask-to-wafer process using a continuous transfer function. Then Newton iterations are employed to solve the continuous inverse problems. Finally, we apply our framework to the mask synthesis for 65 nm SRAM manufacturing. The simulation results show that the optimized masks can be efficiently obtained and good fidelity in patterning is achieved.
Starting Page	2276
Ending Page	2279
File Size	1750696
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4735024
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Random access memory Manufacturing Lithography Optical imaging Inverse problems Equations Nonlinear optics Constraint optimization Electromagnetic modeling Fourier transforms
Content Type	Text
Resource Type	Article

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