NDLI: A new process for self-aligned silicon-on-insulator with block oxide and its memory application for 1T-DRAM

Content Provider	IEEE Xplore Digital Library
Author	Yi-Ming Tseng Jyi-Tsong Lin Yi-Chuen Eng Shiang-Shi Kang Hung-Jen Tseng Ying-Chieh Tsai Bao-Tang Jheng Po-Hsieh Lin
Copyright Year	2008
Description	Author affiliation: Dept. of EE, Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan (Yi-Ming Tseng; Jyi-Tsong Lin; Yi-Chuen Eng; Shiang-Shi Kang; Hung-Jen Tseng; Ying-Chieh Tsai; Bao-Tang Jheng; Po-Hsieh Lin)
Abstract	This paper proposes a new self-aligned process to form the silicon-on-insulator with block oxide. Based on the TCAD simulation, we have proved that the new process can get excellent short-channel effects immunity compared to the previous process [1]. Also, the new process can overcome the problem of the previous one, which can not be used on the thin BOX devices, so that the application of the block oxide can be applied extensively. In addition, we study how the height of the block oxide affects the devices performance in detail. Finally, we demonstrate a novel floating body cell using block oxide for 1T-DRAM application and its memory characteristics, large programming window and low leakage, are better than the conventional counterpart.
Starting Page	1154
Ending Page	1157
File Size	4424404
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734754
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon on insulator technology Immune system Leakage current CMOS technology Thermal resistance Substrates Sun Energy consumption Threshold voltage Semiconductor films
Content Type	Text
Resource Type	Article

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