NDLI: Low resistance Ti/Al/Ni/Au Ohmic contact to (NH treated n-type GaN for high temperature applications

Content Provider	IEEE Xplore Digital Library
Author	Lin, F. Shen, B. Huang, S. Xu, F.J. Yang, H.Y. Chen, W.H. Ma, N. Qin, Z.X. Zhang, G.Y.
Copyright Year	2008
Description	Author affiliation: State Key Lab. of Artificial Microstructure & Mesoscopic Phys., Peking Univ., Beijing, China (Lin, F.; Shen, B.; Huang, S.; Xu, F.J.; Yang, H.Y.; Chen, W.H.; Ma, N.; Qin, Z.X.; Zhang, G.Y.)
Abstract	Low resistance Ti/Al/Ni/Au Ohmic contact to $(NH_{4})_{2}S_{x}$ treated n-type GaN has been studied in the temperature range from 25°C to 600°C It is found that the specific contact resistivity $¿_{c}$ of the sample treated with $(NH_{4})_{2}S_{x}$ solution for 5 min at 90°C decreases with increasing measuring temperature, while the $¿_{c}$ of the sample treated with $(NH_{4})_{2}S_{x}$ solution for 25 min at 90°C increases with increasing measuring temperature. Excellent agreement with the ¿5 min-treated¿ sample can be obtained by the field emission model with an average Schottky barrier height (SBH) $¿_{B}=1.05$ eV. Meanwhile, a field emission model with a temperature-dependent effective SBH is suggested to be responsible for the ¿25 min-treated¿ sample in which metal/semiconductor (MS) interface potential pinch-off may occur.
Starting Page	726
Ending Page	729
File Size	1870269
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734634
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Contact resistance Gold Ohmic contacts Gallium nitride Temperature distribution Temperature measurement Physics Artificial intelligence Conductivity Annealing
Content Type	Text
Resource Type	Article

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