NDLI: Crystalline quality of InN with different indium contents around lattice-matched to GaN

Content Provider	IEEE Xplore Digital Library
Author	Zhenlin Miao Tongjun Yu Bo Shen Fujun Xu Jie Song Fang Lin Lubing Zhao Zhijian Yang
Copyright Year	2008
Description	Author affiliation: State Key Lab. for Mesoscopic Phys., Peking Univ., Beijing, China (Zhenlin Miao; Tongjun Yu; Bo Shen; Fujun Xu; Jie Song; Fang Lin; Lubing Zhao; Zhijian Yang)
Abstract	200 nm thick $In_{x}Al_{1-x}N$ epilayers around lattice-matched to GaN were grown on GaN templates by MOCVD. The elastic strain, surface morphology and crystalline quality of the $In_{x}Al_{1-x}N$ were evaluated by high resolution X-ray diffraction (HRXRD) measurements, scanning electron microscopy (SEM) images and Rutherford backscattering spectroscopy (RBS) analyses. The strain effect, as while as the influences of indium and the GaN templates with different dislocation densities on the quality of $In_{x}Al_{1-x}N$ epilayers were discussed. It is found that the crystalline quality was quite good when $In_{x}Al_{1-x}N$ around lattice matched to GaN and degraded when $In_{x}Al_{1-x}N$ under relatively large tensile or compressive strain accompanied by formation of crack or pits of reverse pyramid. The micro-morphology observations of $In_{x}Al_{1-x}N$ layers with different indium compositions showed that the formation of dislocations was related with indium and compressive strain in $In_{x}Al_{1-x}N$ layers. Furthermore, more pits were observed in lattice matched $In_{x}Al_{1-x}N$ layers on GaN template of high dislocation density than samples on GaN template with low dislocation density GaN. It is believed that threading dislocations induced by GaN template might be a part of origin of the pits, and modulate the effect of compressive stain on the $In_{x}Al_{1-x}N$ quality.
Starting Page	718
Ending Page	721
File Size	1487208
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734632
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallization Gallium nitride Indium Strain measurement Scanning electron microscopy Capacitive sensors Lattices MOCVD Surface morphology Image resolution
Content Type	Text
Resource Type	Article

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