NDLI: Thermal stability of HfON, HfSiON and HfTaON gate dielectrics

Content Provider	IEEE Xplore Digital Library
Author	Gaobo Xu Qiuxia Xu
Copyright Year	2008
Description	Author affiliation: Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China (Gaobo Xu; Qiuxia Xu)
Abstract	The thermal stability of HfON, HfSiON and HfTaON films on Si substrate prepared by physical vapor deposition were investigated using high resolution transmission electronic microscope and x-ray photoelectron spectroscopy. $HfO_{2}$ film has lower crystallization temperature. N, Si or Ta incorporation into $HfO_{2}$ film can improve its crystallization temperature. But HfON film-s crystallization temperature is still low and crystallizes partially under 700°C. HfSiON and HfTaON have higher crystallization temperature. And HfSiON can sustain amorphous under 1000°C, while partial crystallization of HfTaON is observed at the same temperature. Si or Ta incorporation has different influence on the gate dielectric¿s thermal stability. HfSiON film has good thermal stability and don¿t react with Si substrate under higher temperature. While, HfTaON film easily reacts with Si substrate, forming the low k interfacial layer.
Starting Page	1284
Ending Page	1287
File Size	1714707
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734776
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermal stability Crystallization Temperature Dielectric substrates Semiconductor films Hafnium oxide Chemical vapor deposition Photoelectron microscopy Transmission electron microscopy Spectroscopy
Content Type	Text
Resource Type	Article

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