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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhiyu Chen Xudong Zou Jinwen Zhang |
| Copyright Year | 2008 |
| Description | Author affiliation: Inst. of Microelectron., Peking Univ., Beijing, China (Zhiyu Chen; Xudong Zou; Jinwen Zhang) |
| Abstract | In this paper, charge decay of PECVD $SiO_{2}/Si_{3}N_{4}$ double layers electrets with different thicknesses of $Si_{3}N_{4}$ under different environmental conditions was investigated. Single layers of PECVD prepared $SiO_{2}$ and $Si_{3}N_{4}$ were also studied. Double layers electrets exhibits better charge stability than single layer under different conditions. As for the double layers with 2 nm-100 nm $Si_{3}N_{4},$ their charge stability at 250°C is as good as each other. However, if the $Si_{3}N_{4}$ thickness continues to increase, the charge stability will be decreased. Thicker layer of $Si_{3}N_{4}$ leads to better charge stability under 95%RH. Heat treatment at 250°C can improve charge stability under high humidity condition, especially for double layers electrets with thin $Si_{3}N_{4}.$ After heat treatment at 250°C for 3hrs, the PECVD $SiO_{2}/Si_{3}N_{4}$ double layers electrets with 50 nm $Si_{3}N_{4}$ show the optimized charge stability under different conditions. |
| Starting Page | 2412 |
| Ending Page | 2415 |
| File Size | 1108758 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424421855 |
| DOI | 10.1109/ICSICT.2008.4735057 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-20 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electrets Stability Corona Electrodes Voltage Biomedical measurements Heat treatment Silicon compounds Laboratories Fabrication Si |
| Content Type | Text |
| Resource Type | Article |
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