NDLI: Characteristics of inorganic and organic ferroelectric thin films for memory applications

Content Provider	IEEE Xplore Digital Library
Author	Ishiwara, H.
Copyright Year	2008
Description	Author affiliation: Interdiscipl. Grad. Sch. of Sci. & Eng., Tokyo Inst. of Technol., Yokohama, Japan (Ishiwara, H.)
Abstract	Characteristics of inorganic and organic ferroelectric thin films are discussed from viewpoints of ferroelectric random access memory (FeRAM) applications. It has been found in $BiFeO_{3}$ films formed by chemical solution deposition that the leakage current at high electric field decreases significantly by substituting Mn atoms for Fe atoms. In these films, well saturated hysteresis loops in P-E (polarization vs. electric field) characteristics have been observed. It has also been found that the fatigue endurance is much improved by substituting Sm atoms for Bi atoms. Next, properties of organic ferroelectric thin films suitable for fabrication of ferroelectric-gate FETs (field effect transistors) are discussed. It has been found in a 60 nm-thick P(VDF-TrFE) (polyvinyliden fluoride-trifluoroethylene) film that the remanent polarization is as large as 11.9 $¿C/cm^{2}$ and the coercive voltage is as low as 2 V. It has also been found that the data retention characteristics are improved by adding PMMA (poly methyl methacrylate) to P(VDF-TrFE).
Starting Page	857
Ending Page	860
File Size	2549818
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734678
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Ferroelectric materials Transistors Ferroelectric films Atomic layer deposition Random access memory Polarization FETs Nonvolatile memory Chemicals Leakage current
Content Type	Text
Resource Type	Article

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