NDLI: Phase-noise improvement of GaAs pHEMT K-band voltage controlled oscillator using tunable field-plate voltage technology

Content Provider	IEEE Xplore Digital Library
Author	Hsien-Chin Chiu Shao Wei Lin Chien-Cheng Wei Chia-Shih Cheng Yu-Fei Wu Fu, J.S.
Copyright Year	2008
Description	Author affiliation: Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan (Hsien-Chin Chiu; Shao Wei Lin; Chien-Cheng Wei; Chia-Shih Cheng; Yu-Fei Wu; Fu, J.S.)
Abstract	This paper presents a voltage-controlled oscillator (VCO) with low phase noise performance by applying tunable field-plate (FP) voltage on 0.15 ¿m gate length GaAs pseudomorphic high electron mobility transistors (pHEMTs). In this study, the FP metal between gate and drain terminals was connected to a single pad and was controlled by an extra voltage supplier $(V_{FP}).$ Owing to the depth modulation of field-plate induced depletion region at various field-plate voltages, the device flicker noise were also improved by applying negative VFP. This technique is easy to apply, based on standard pHEMT fabrication, and especially attractive for reducing the phase noise of VCO design without extra power consumption. A tunable phase noise inductor-capacitor (L-C) feedback 21 GHz VCO was fabricated in a standard 0.15 ¿m GaAs pHEMT process. The measured phase-noise of this novel design is -95 dBc/Hz at an offset frequency of 1 MHz and this value can be improved to -99.6 dBc/Hz at VFP of -5.5 V. The core dc power consumption of this circuit is 30.8 mW.
Starting Page	1407
Ending Page	1410
File Size	1703984
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734807
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Voltage-controlled oscillators Gallium arsenide PHEMTs K-band Tunable circuits and devices Phase noise Energy consumption Electron mobility HEMTs MODFETs CPW Voltage-controlled oscillators (VCOs) GaAs RFIC low phase-noise field-plate pHEMT
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Phase-Noise Improvement of GaAs pHEMT K-Band Voltage-Controlled Oscillator Using Tunable Field-Plate Voltage Technology

A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

An Ultra Low Phase Noise W-Band GaAs-Based PHEMT MMIC CPW VCO

Monolithic 2-μm/0.5-μm GaAs HBT-HEMT (BiHEMT) process for low phase noise voltage controlled oscillators (VCOs)

Residual and oscillator phase noise in GaAs metamorphic HEMTs

Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

A low-power subharmonic injection-locked oscillator using E/D-mode GaAs PHEMTs for Ka-band applications

Quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

Phase-noise improvement of GaAs pHEMT K-band voltage controlled oscillator using tunable field-plate voltage technology

Similar Documents

Phase-Noise Improvement of GaAs pHEMT K-Band Voltage-Controlled Oscillator Using Tunable Field-Plate Voltage Technology

A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

An Ultra Low Phase Noise W-Band GaAs-Based PHEMT MMIC CPW VCO

Monolithic 2-μm/0.5-μm GaAs HBT-HEMT (BiHEMT) process for low phase noise voltage controlled oscillators (VCOs)

Residual and oscillator phase noise in GaAs metamorphic HEMTs

Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

A low-power subharmonic injection-locked oscillator using E/D-mode GaAs PHEMTs for Ka-band applications

Quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

Phase-noise improvement of GaAs pHEMT K-band voltage controlled oscillator using tunable field-plate voltage technology