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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Pingan Zhao Yinqing Li Jia Zhou Ran Liu Yiping Huang Haifen Xie Haisheng Xu |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Microelectron., Fudan Univ., Shanghai, China (Pingan Zhao; Yinqing Li; Jia Zhou; Ran Liu; Yiping Huang) || Dept. of Phys., East China Univ. of Sci. & Technol., Shanghai, China (Haifen Xie; Haisheng Xu) |
| Abstract | A novel digital microfluidic device using the high dielectric constant material P(VDF-TrFE) (poly-vinylidene fluoride-trifluoroethylene) as the dielectric layer fabricated by spin-coating process is proposed. The device is featured with the advantages of both low driving voltage and IC compatible process. The dielectric constant of P(VDF-TrFE) is measured as high as 11.6. The contact angle between the liquid droplet and the device changes from 118° to 75° under an applied voltage of 30 V. A droplet of 3¿L PBS (phosphate buffered saline) has been successfully driven reciprocatively on the planar surface under an operating voltage of 20 V. |
| Starting Page | 2504 |
| Ending Page | 2507 |
| File Size | 2250749 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424421855 |
| DOI | 10.1109/ICSICT.2008.4735080 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-20 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Microfluidics High K dielectric materials High-K gate dielectrics Solids Low voltage Application specific integrated circuits Microelectronics Dielectric materials Dielectric constant Dielectric measurements |
| Content Type | Text |
| Resource Type | Article |
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