NDLI: Fluorine plasma ion implantation technology: a new dimension in gan device processing

Content Provider	IEEE Xplore Digital Library
Author	Chen, K.J.
Copyright Year	2008
Description	Author affiliation: Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China (Chen, K.J.)
Abstract	The recent discovery of the potential and charge modulation by fluorine ions incorporated in III-nitride heterojunction FETs has opened up numerous new opportunities of realizing desired device performance and fabricating integrated circuits with desirable circuit configurations. The most significant development based on the fluorine plasma ion implantation technology is the demonstration of self-aligned enhancement-mode (E-mode) AlGaN/GaN HEMT (high electron mobility transistors) that exhibits low on-resistance and low knee-voltage. In this paper, a comprehensive overview of the fluorine plasma ion implantation technology is presented. The discussions will focus on: 1) underlying physical mechanisms; 2) detailed DC and RF device characteristics; 3) circuit applications in wireless communication, high temperature electronics and power electronics and; and 4) reliability of fluorine ions in III-nitride semiconductors.
Starting Page	1074
Ending Page	1077
File Size	1896059
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734737
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Plasma devices Plasma immersion ion implantation Plasma materials processing Ion implantation Integrated circuit technology HEMTs Plasma temperature Heterojunctions FETs Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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