NDLI: Improved performance of 3D tri-gate 4H-SiC MESFETs with recessed drift region

Content Provider	IEEE Xplore Digital Library
Author	Jinping Zhang Bo Zhang Zhaoji Li
Copyright Year	2008
Description	Author affiliation: State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China (Jinping Zhang; Bo Zhang; Zhaoji Li)
Abstract	An improved 3D tri-gate 4H-SiC MESFETs structure with recessed drift region was proposed. The recessed drift region of the proposed structure is to reduce the channel thickness between gate and drain to increase breakdown voltage as well as to eliminate gate depletion layer extension to source/drain to decrease gate-source capacitance. The DC and RF electrical characteristics of the proposed structure were studied in detail by numerical simulation. The simulated results showed that the maximum theoretical output power density of the proposed structure is about 19% larger than that of the published 3D tri-gate structure. The cut-off frequency $(f_{T})$ and the maximum oscillation frequency (fmax) of the proposed structure are 19.3 GHz and 74.1 GHz compared to 16.1 GHz and 55.9 GHz of those of the published 3D tri-gate structure, respectively.
Starting Page	1098
Ending Page	1101
File Size	1430380
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734743
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MESFETs Silicon carbide Radio frequency Capacitance Doping Strips Cutoff frequency Thermal conductivity Laboratories Thin film devices
Content Type	Text
Resource Type	Article

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