NDLI: In-situ boron-doped low-stress LPCVD polysilicon for micromechanical disk resonator

Content Provider	IEEE Xplore Digital Library
Author	Yunfei Liu Jing Xie Jinling Yang Longjuan Tang Fuhua Yang
Copyright Year	2008
Description	Author affiliation: Inst. of Semicond., Chinese Acad. of Sci., Beijing, China (Yunfei Liu; Jing Xie; Jinling Yang; Longjuan Tang; Fuhua Yang)
Abstract	Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectromechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570°C and annealed at 1000°C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and high-f micro- mechanical disk resonators.
Starting Page	2387
Ending Page	2390
File Size	1427042
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4735073
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Micromechanical devices Residual stresses Conductivity Rapid thermal annealing Silicon Resonance Resonant frequency Q factor Thin film circuits Chemical vapor deposition
Content Type	Text
Resource Type	Article

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