NDLI: Investigations on InAsSb/GaAs high electron mobility transistors with gate passivations

Content Provider	IEEE Xplore Digital Library
Author	Ching-Sung Lee Ciou-Sheng He Wei-Chou Hsu Ke-Hua Su Ping-Chang Yang Bo-i Chou An-Yung Kao
Copyright Year	2008
Description	Author affiliation: Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan (Ching-Sung Lee)
Abstract	This work reports, high electron mobility transistors (HEMTs) using a dilute antimony $In_{0.2}Ga_{0.8}AsSb$ channel, grown by molecular beam epitaxy (MBE) system. Introducing the surfactant-like Sb atoms during growth of the InGaAs/GaAs quantum well (QW) was devised to effectively improve the channel confinement capability and the interfacial quality within the InGaAsSb/GaAs QW heterostructure, resulting in enhanced carrier transport property and superior device performances. In comparison, the proposed devices with employing sulfur $(NH_{4})_{2}S_{x}$ passivation (sample A), silicon nitride $(SiN_{x})$ surface passivation (sample B), or without passivation (sample C) have been investigated. Sample A (B/C) has demonstrated superiorly the maximum extrinsic trans-conductance $(g_{m,}$ $_{max})$ of 221 (205/183) mS/mm, the drain saturation current density (IDSS) of 205 (190/174) mA/mm, the gate-voltage swing (GVS) of 1.105 (1.28/1.482) V, and the P.A.E. characteristic 30.4 (21.4/13) % at 300 K, with the gate dimensions of 1 × 200 $¿m^{2}.$
Starting Page	1106
Ending Page	1109
File Size	1071792
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734730
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Passivation HEMTs MODFETs Molecular beam epitaxial growth Gallium arsenide Atomic layer deposition Indium gallium arsenide Carrier confinement Silicon compounds Current density
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double delta-doped Channels Heterostructures

Carrier confinement and feed-back correlation in InAlAs/InGaAs HEMTs on InP substrate

InGaAs insulated gate field effect transistors using silicon interlayer based passivation technique

High electron density and mobility InGaAs/InAIAs modulation doped structures grown on InP

Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor

Improved formal passivations of pseudomorphic high electron mobility transistors

Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's)

High-performance III-V MOSFETs enabled by atomic layer deposition

Transport properties of InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate

Investigations on InAsSb/GaAs high electron mobility transistors with gate passivations

Similar Documents

High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double delta-doped Channels Heterostructures

Carrier confinement and feed-back correlation in InAlAs/InGaAs HEMTs on InP substrate

InGaAs insulated gate field effect transistors using silicon interlayer based passivation technique

High electron density and mobility InGaAs/InAIAs modulation doped structures grown on InP

Device linearity enhancement of InGaP/InGaAs/GaAs camel-gate p-channel pseudomorphic high electron mobility transistor

Improved formal passivations of pseudomorphic high electron mobility transistors

Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's)

High-performance III-V MOSFETs enabled by atomic layer deposition

Transport properties of InAlAs/InGaAs metamorphic high electron mobility transistors on GaAs substrate

Investigations on InAsSb/GaAs high electron mobility transistors with gate passivations