NDLI: AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

Content Provider	IEEE Xplore Digital Library
Author	Jian Tang Xiaoliang Wang Tangsheng Chen Hongling Xiao Junxue Ran Minglan Zhang Guoxin Hu Chun Feng Qifeng Hou Meng Wei Jinmin Li Zhanguo Wang
Copyright Year	2008
Description	Author affiliation: Nanjing Electron Devices Inst., Nanjing, China (Tangsheng Chen) \|\| Mater. Sci. Center, Chinese Acad. of Sci., Beijing, China (Jian Tang; Xiaoliang Wang; Hongling Xiao; Junxue Ran; Minglan Zhang; Guoxin Hu; Chun Feng; Qifeng Hou; Meng Wei; Jinmin Li; Zhanguo Wang)
Abstract	AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 ¿m× 5 ¿m. A mobility as high as 1950 $cm^{2}/Vs$ with the sheet carrier density of $9.89×10^{12}$ $cm^{-2}$ was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 ¿/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.
Starting Page	1114
Ending Page	1117
File Size	3967797
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734732
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Gallium nitride Aluminum gallium nitride DH-HEMTs MOCVD HEMTs MODFETs Cutoff frequency Heterojunctions Rough surfaces Surface roughness
Content Type	Text
Resource Type	Article

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