NDLI: Transport and spin properties of the two-dimensional electron gas in GaN-based heterostructures

Content Provider	IEEE Xplore Digital Library
Author	Bo Shen Ning Tang
Copyright Year	2008
Description	Author affiliation: Sch. of Phys., Peking Univ., Beijing, China (Bo Shen; Ning Tang)
Abstract	Magnetotransport study has been performed on $Al_{x}Ga_{1-x}N/GaN$ heterostructures at low temperatures and high magnetic fields. The magneto-intersubband scattering effect of the two-dimensional electron gas (2DEG) has been observed in the triangular quantum well at the heterointerface. It is found that the effective mass of the 2DEG have strong dependence on the magnetic field and the 2DEG density due to the conduction band nonparabolicity in GaN. The zero-field spin splitting of the 2DEG in $Al_{x}Ga_{1-x}N/GaN$ heterostructures has been studied. The obtained zero-field spin splitting energy is 2.5 meV, and the obtained spin-obit coupling parameter is $2.2×10^{-12}$ eVm. Meanwhile, the circular photo-galvanic effect induced by the spin-orbit interactions of the 2DEG in $Al_{x}Ga_{1-x}N/GaN$ heterostructures has also been investigated. The ratio of bulk inversion asymmetry and structure inversion asymmetry (SIA) terms is estimated to be about 13.2, indicating that the SIA is the dominant mechanism to induce the k-linear spin splitting of the subbands in the triangular quantum well at $Al_{x}Ga_{1-x}N/GaN$ heterointerfaces.
Starting Page	1086
Ending Page	1089
File Size	1157378
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734740
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Electrons Gallium nitride Magnetic properties Temperature X-ray diffraction Physics Particle scattering Effective mass Magnetic semiconductors MOCVD
Content Type	Text
Resource Type	Article

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