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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chen, H.Z. Kao, M.C. Young, S.L. Chiang, J.L. |
| Copyright Year | 2011 |
| Description | Author affiliation: Department of Electronic Engineering, Hsiuping Institute of Technology, Taichung, Taiwan (Chen, H.Z.; Kao, M.C.; Young, S.L.) || Department of Electronic Engineering, Chung Chou Institute of Technology, Changhua, Taiwan (Chiang, J.L.) |
| Abstract | Bi4Ti2.96Ta0.04O12 (BTTO) thin films were deposited on Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel method. The effects of Ta-substitution and annealing temperature (500–800 °C) on the microstructure and ferroelectric properties of Bi4Ti3O12 thin films were investigated. X-Ray diffraction analysis reveals that the intensities of (117) peaks are realitively broad and weak at annealing temperatures smaller than 700 °C. With the increase of annealing temperature from 500 °C to 800 °C, the grain size of BTTO thin films increases. The BTTO thin films annealed at 700 °C exhibit the highest remanent polarization (2Pr) of 40 $μC/cm^{2}$ and lowest coercive field (2Ec) of 120 kV/cm. It is obvious that the measured 2Pr of the BTTO thin film is larger than that of Bi4Ti3O12 thin films (2Pr=25 $μC/cm^{2})$ The improved ferroelectric properties can be attributed to the substitution of $Ta^{5+}$ to $Ti^{4+}$ in Bi4Ti3O12 assisted the elimination of defects such as oxygen vacancy and vacancy complexes. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 313819 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781457703799 |
| ISSN | 21593531 |
| e-ISBN | 9781457703782 |
| e-ISBN | 9781457703775 |
| DOI | 10.1109/INEC.2011.5991741 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-06-21 |
| Publisher Place | Taiwan |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | ferroelectric Annealing X-ray scattering Films remanent polarization Surface morphology bismuth titanate Bismuth thin film Microstructure Substrates |
| Content Type | Text |
| Resource Type | Article |
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