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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Martinez, E. Fundora, A. Siqueiros, J.M. |
| Copyright Year | 2000 |
| Description | Author affiliation: Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Mexico (Martinez, E.) |
| Abstract | A novel ferroelectric thin film system denoted by xSrTiO/sub 3/-(1-x)PbTiO/sub 3/ (SPT) is studied. In this work we report results on the composition 0.5SrTiO/sub 3/-0.5PbTiO/sub 3/ (SPT5) only. For this investigation, SPT5 thin films were deposited at different temperatures (500, 550, 600 and 650/spl deg/C) by argon/oxygen ion rf sputtering on Pt/TiN/sub x//SiO/sub 2//Si, RuO/sub x//TiN/sub x//SiO/sub 2//Si and TiN/sub x//SiO/sub 2//Si substrates at different relative concentrations of argon and oxygen (Ar/O = 100/0, 50/50, 0/100). The polycrystalline xSrTiO/sub 3/-(1-x)PbTiO/sub 3/ perovskite phase formation is confirmed by x-ray diffraction (XRD) analysis and the growth dynamics is studied by scanning electron microscopy (SEM). The nature of the SPT5 layer-electrode interface is also analyzed by this technique. The microstructural features of the SPT5 thin films on Pt/TiN/sub x//SiO/sub 2//Si, RuO/sub x//TiN/sub x//SiO/sub 2//Si and TiN/sub x//SiO/sub 2//Si substrates obtained by SEM were correlated to the deposit conditions. |
| Starting Page | 893 |
| Ending Page | 896 |
| File Size | 360796 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780359402 |
| ISSN | 10994734 |
| DOI | 10.1109/ISAF.2000.942461 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2000-07-21 |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Tin Sputtering Argon Scanning electron microscopy Semiconductor thin films Ferroelectric materials Transistors Temperature Substrates X-ray diffraction |
| Content Type | Text |
| Resource Type | Article |
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