NDLI: Comparison of PN diodes and FETs as Phase Change Memory (PCM) driving devices

Content Provider	IEEE Xplore Digital Library
Author	Lin Li Kailiang Lu Kwong, K.C. Jin He Mansun Chan
Copyright Year	2008
Description	Author affiliation: Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China (Lin Li; Kailiang Lu; Kwong, K.C.; Jin He; Mansun Chan)
Abstract	In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the 90 nm to 22 nm technology node, PN diodes are found to be a better choice for delivering higher programming currents down to 22 nm technology node due to the higher effective cross-sectional area of current flow. In addition, the GAA MOSFETs are subject to serious cross-talk issues that may limit their performance in PCM applications.
Starting Page	928
Ending Page	931
File Size	2788221
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734686
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Diodes FETs Phase change memory Phase change materials MOSFETs Material storage Solid modeling Crystalline materials Switches Immune system
Content Type	Text
Resource Type	Article

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