NDLI: Alloying effects in Ni Silicide for CMOS applications

Content Provider	IEEE Xplore Digital Library
Author	Guo-Ping Ru Yu-Long Jiang Bao-Min Wang Yi-Fei Huang Wei Huang
Copyright Year	2008
Description	Author affiliation: Dept. of Microelectron., Fudan Univ., Shanghai, China (Guo-Ping Ru; Yu-Long Jiang; Bao-Min Wang; Yi-Fei Huang; Wei Huang)
Abstract	The solid-state reaction of Ni/Si in the presence of other elements is investigated. The alloying effects on both NiSi/Si Schottky contacts and Ni fully silicided (FUSI) gates on $SiO_{2}$ dielectric are studied by phase, composition, and electrical characterization tools. The results show that after silicidation Er, Y, and Al all segregated at the Ni-silicide surface rather than piled up at the Ni-silicide/Si interface due to their high affinity to oxygen, therefore little modulation of Schottky barrier height was observed. In contrast, Ho- and Er-alloyed Ni FUSI gates showed significant work function modulation, which could be related to the crystallinity change of the NiSi film in the presence of these elements.
Starting Page	1264
Ending Page	1267
File Size	1336508
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734781
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Alloying Silicides Silicidation Substrates Schottky barriers Erbium Nonhomogeneous media Dielectrics Mass spectroscopy Crystallization
Content Type	Text
Resource Type	Article

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