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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ko-Min Chang |
| Copyright Year | 2008 |
| Description | Author affiliation: Silicon Technol. Solutions, Freescale Semicond., Inc., Austin, TX, USA (Ko-Min Chang) |
| Abstract | Since Tiwari introduced the nanocrystal memory concept in 1996, much progress has been made in the areas of nanocrystal deposition, storage stack engineering, process integration, cell design, and array architecture. This paper describes the highly versatile flash technology, SG-TFS, in terms of its applicability from low-end to high-end, from code storage to data storage, and from consumer to automotive market segments. SG-TFS stands for split-gate thin film storage and is built with silicon nanocrystals as its storage medium. Superior performance and reliability are demonstrated with a 90 nm 16 Mbit memory array. |
| Starting Page | 943 |
| Ending Page | 946 |
| File Size | 5205670 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424421855 |
| DOI | 10.1109/ICSICT.2008.4734698 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-20 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Nanocrystals Nonvolatile memory Quantum dots Automotive engineering Flash memory Design engineering Process design Split gate flash memory cells Semiconductor thin films |
| Content Type | Text |
| Resource Type | Article |
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