NDLI: Strain influence on analog performance of single-gate and FinFET SOI nMOSFETs

Content Provider	IEEE Xplore Digital Library
Author	Martino, J.A. Pavanello, M.A. Simoen, E. Claeys, C.
Copyright Year	2008
Description	Author affiliation: LSI, Univ. of Sao Paulo, Sao Paulo, Brazil (Martino, J.A.; Pavanello, M.A.) \|\| IMEC, Leuven, Belgium (Simoen, E.)
Abstract	This work studies the analog performance of uniaxially and biaxially strained single-gate fully depleted SOI nMOSFETs and standard and strained Si (sSOI) n-type triple-gate FinFETs with high-¿ dielectrics and TiN gate material. The analysis is performed focusing on some important analog figures of merit such as transconductance, Early voltage, output conductance and intrinsic voltage gain. It is shown that for single-gate devices the use of any kind of strain promotes the improvement of most analog parameters, resulting in a better or at least not worsen gain than for its unstrained counterpart. However for FinFETs devices, it is demonstrated that both standard and strained FinFETs with short channel length and narrow fins have similar analog properties, whereas an increase of the channel length degrades the Early voltage of the strained devices, consequently decreasing the device intrinsic voltage gain with respect to standard ones. Narrow strained FinFETs with long channel show a degradation of the Early voltage if compared to standard ones suggesting that strained devices are more subjected to the channel length modulation effect. Only for wider and long FinFETs the effect of strain is favorable to both $g_{m}$ and $g_{D},$ resulting in a larger intrinsic voltage gain than in standard FinFETs.
Starting Page	84
Ending Page	87
File Size	884443
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734477
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Capacitive sensors FinFETs MOSFETs Voltage Degradation Tin Conducting materials Dielectric materials Performance analysis Transconductance
Content Type	Text
Resource Type	Article

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