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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tai-Yi Lee Jyi-Tsong Lin Kao-Cheng Lin |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ. (NSYSU EE), Kaohsiung, Taiwan (Tai-Yi Lee; Jyi-Tsong Lin; Kao-Cheng Lin) |
| Abstract | In this paper we bring up a new progressive vertical structure (EGVMOS) with Embedded Gate for a MOSFET. This new structure provides not only eliminating the kink effect, but also having good gate controllability. ISE TCAD 2D simulation is carried out for evaluating its different electric characteristics. Being compared with the other vertical devices, the new device using the different implant tilts approves good results and demonstrates better device behaviors. |
| Starting Page | 68 |
| Ending Page | 71 |
| File Size | 2966189 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424421855 |
| DOI | 10.1109/ICSICT.2008.4734465 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-20 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MOSFETs Etching Fabrication Silicon Substrates Controllability Electric variables Random access memory Capacitance Sun |
| Content Type | Text |
| Resource Type | Article |
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