NDLI: The parasitic effects induced by the contact in RRAM with MIM structure

Content Provider	IEEE Xplore Digital Library
Author	Lijie Zhang Ru Huang Wang, A.Z.H. Dake Wu Runsheng Wang Yongbian Kuang
Copyright Year	2008
Description	Author affiliation: Inst. of Microelectron., Peking Univ., Peking, China (Lijie Zhang; Ru Huang; Dake Wu; Runsheng Wang; Yongbian Kuang) \|\| Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA (Wang, A.Z.H.)
Abstract	This paper has reported a programmable switch composed of $copper-doped-SiO_{2}$ sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode (TE), while with regard to the cell without TE, no rectifying-like I-V characterization was observed. This rectifying-like I-V curve is properly caused by electrode contact. To further prove the effect of TE, $R_{ON}$ retention behavior of the device with TE and without TE were investigated. The testing results clearly showed that the $R_{ON}$ retention property of device with TE was worse than that without TE. We propose a model for the interface between top electrode and $copper-doped-SiO_{2}$ to interpret this rectifying-like performance, which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and resistive-material. The results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MIM RRAM design.
Starting Page	932
Ending Page	935
File Size	2486963
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734687
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Copper Electrodes Tellurium Voltage Annealing Contacts Switches Random access memory Tungsten Silicon
Content Type	Text
Resource Type	Article

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