NDLI: The design, fabrication and characterization of GaAs-based RTT with groove and self-aligned Schottky gate structure

Content Provider	IEEE Xplore Digital Library
Author	Wei-Lian Guo Ping-Juan Niu Xiao-yun Li Chang-Yun Miao Wei Wang Xin Yu Yao-Hui Shang Zhen Feng Guo-Ping Tian Ya-Li Li Yong-Qiang Liu Ming-Wen Yuan Xiao-Bai Li
Copyright Year	2008
Description	Author affiliation: Sch. of Inf. & Commun., Tainjin Polytech. Univ., Tainjin, China (Wei-Lian Guo; Ping-Juan Niu; Xiao-yun Li; Chang-Yun Miao; Wei Wang; Xin Yu) \|\| 13th Inst., CETC, Shijiazhuang, China (Yao-Hui Shang; Zhen Feng; Guo-Ping Tian; Ya-Li Li; Yong-Qiang Liu; Ming-Wen Yuan; Xiao-Bai Li)
Abstract	In this paper, the design of material structure and device structure , fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (RTT) with groove and self-aligned gate structure have been described completely and systematically .The experimental results measured from our fabricated RTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46, the transconductance $g_{m}$ is in a range of 1.3~8.0 ms, the cutoff frequency $f_{Tgm}$ and speed index S are 1.59 GHz and 13.5 ps/V respectively .
Starting Page	571
Ending Page	574
File Size	1946414
Page Count	4
File Format	PDF
ISBN	9781424421855
DOI	10.1109/ICSICT.2008.4734594
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-10-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Resonant tunneling devices Satellite broadcasting Gallium arsenide Transconductance Cutoff frequency Electrodes Voltage Shape Current measurement GaAs based quantum tunneling effect Resonant Tunneling Transistor (RTT) gate controlled structure sckottky gate
Content Type	Text
Resource Type	Article

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